The RS1E150GN is a 30V N-channel power MOSFET from ROHM Semiconductor GmbH, designed for applications requiring low on-resistance and high power handling. It features a maximum R_DS(on) of 8.8 mOc at a gate-source voltage of 4.5V and can handle continuous drain currents of ¬±15A at 25¬8C, with a pulsed drain current capability of ¬±60A. The device is housed in an HSOP8 package, allowing for efficient thermal management with a power dissipation rating of 22W. It is compliant with RoHS and halogen-free standards, making it suitable for environmentally conscious designs. The MOSFET is also 100% tested for gate charge and avalanche characteristics, ensuring reliability in various applications.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RS1E150GN | RS1E150GN |
| Product Name | 4.5V Drive Nch MOSFET | 4.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 40000 milliamps | 40000 milliamps |
| PD | 22000 milliwatts | 22000 milliwatts |
