RQ6C065BC is a P-channel MOSFET designed for switching applications, featuring a maximum drain-source voltage (V_DSS) of -20V and a continuous drain current (I_D) rating of ¬±6.5A. The device has a low on-resistance (R_DS(on)) of up to 21.0 mOc, which contributes to its efficiency in power management. It is housed in a compact TSMT6 package, making it suitable for applications where space is a constraint. The MOSFET is RoHS compliant and halogen-free, ensuring it meets environmental standards. With a power dissipation capability of 1.25W and a junction temperature rating of up to 150¬8C, it is suitable for a variety of applications, including load switching. The device also features a low gate threshold voltage, enhancing its performance in low-voltage applications.
RQ6C065BC is high power small mold package(HSMT8) MOSFET for switching application.
RQ6C065BC is high power small mold package(HSMT8) MOSFET for switching application.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RQ6C065BC | RQ6C065BC |
| Product Name | Pch -20V -6.5A Middle Power MOSFET | Pch -20V -6.5A Middle Power MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -20 volts | -20 volts |
| IDSS | -6500 milliamps | -6500 milliamps |
| QG | 22 nC | 22 nC |
| PD | 1250 milliwatts | 1250 milliwatts |
