ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ1C065UNTR RQ1C065UNTR

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 116581-RQ1C065UNTR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TSMT8 Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.5A (Ta) Gate-Source Threshold Voltage: 1V @ 1mA Max Gate Charge: 11nC @ 4.5V Max Input Capacitance: 870pF @ 10V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 22 mOhm @ 6.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 116581-RQ1C065UNTR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TSMT8 Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.5A (Ta) Gate-Source Threshold Voltage: 1V @ 1mA Max Gate Charge: 11nC @ 4.5V Max Input Capacitance: 870pF @ 10V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 22 mOhm @ 6.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ1C065UNTR - 116581-RQ1C065UNTR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ1C065UNTR
116581-RQ1C065UNTR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ1C065UNTR 116581-RQ1C065UNTR
Manufacturer: Rohm Semiconductor Win Source Part Number: 116581-RQ1C065UNTR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TSMT8 Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.5A (Ta) Gate-Source Threshold Voltage: 1V @ 1mA Max Gate Charge: 11nC @ 4.5V Max Input Capacitance: 870pF @ 10V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 22 mOhm @ 6.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 116581-RQ1C065UNTR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TSMT8
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.5A (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 11nC @ 4.5V
Max Input Capacitance: 870pF @ 10V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 22 mOhm @ 6.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
20V 6.5A MOSFET Transistor
278-RQ1C065UNTR
20V 6.5A MOSFET Transistor 278-RQ1C065UNTR
MOSFET N-CH 20V 6.5A TSMT8 Product overview: RQ1C065UNTR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ1C065UNTR can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 6.5A TSMT8 Product overview: RQ1C065UNTR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ1C065UNTR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - RQ1C065UNCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RQ1C065UNCT-ND
Single FETs, MOSFETs RQ1C065UNCT-ND
N-Channel 20V 6.5A (Ta) 700mW (Ta) Surface Mount TSMT8

N-Channel 20V 6.5A (Ta) 700mW (Ta) Surface Mount TSMT8

Buy Now Datasheet
Single FETs, MOSFETs - RQ1C065UNTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RQ1C065UNTR-ND
Single FETs, MOSFETs RQ1C065UNTR-ND
N-Channel 20V 6.5A (Ta) 700mW (Ta) Surface Mount TSMT8

N-Channel 20V 6.5A (Ta) 700mW (Ta) Surface Mount TSMT8

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 1.5V Drive Nch MOSFET

MOSFET 1.5V Drive Nch MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RQ1C065UNTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RQ1C065UNTR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RQ1C065UNTR
MOSFET N-CH 20V 6.5A TSMT8

MOSFET N-CH 20V 6.5A TSMT8

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 116581-RQ1C065UNTR 278-RQ1C065UNTR RQ1C065UNCT-ND RQ1C065UNTR RQ1C065UNTR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ1C065UNTR 20V 6.5A MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 20 volts
PD 700 milliwatts 1.5 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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