RS1E200GN is an N-channel 30V power MOSFET in an HSOP8 package, designed for switching applications. It has a maximum continuous drain current of 20A at 25°C, a pulsed drain current of 80A, and a maximum on-resistance of 4.6mΩ at 10V gate-source voltage. The device dissipates 25W of power and operates with a junction temperature range of -55°C to 150°C. It is RoHS compliant and halogen-free, with 100% Rg and UIS tested. Thermal resistance from junction to case is 5.0°C/W, and junction-to-ambient thermal resistance is 41.7°C/W when mounted on a 40×40×0.8mm Cu board. The package uses tape and reel packaging with a 330mm reel size and 2500-piece unit size.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RS1E200GN | RS1E200GN |
| Product Name | Nch 30V 57A Power MOSFET | 4.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 57000 milliamps | 57000 milliamps |
| QG | 7.8 nC | |
| PD | 25000 milliwatts | 25000 milliwatts |
