ROHM Semiconductor GmbH Nch 30V 57A Power MOSFET RS1E200GN

Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Datasheet
Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Nch 30V 57A Power MOSFET - RS1E200GN - ROHM Semiconductor GmbH
Willich, Germany
Nch 30V 57A Power MOSFET
RS1E200GN
Nch 30V 57A Power MOSFET RS1E200GN
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet
4.5V Drive Nch MOSFET - RS1E200GN - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
4.5V Drive Nch MOSFET
RS1E200GN
4.5V Drive Nch MOSFET RS1E200GN
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number RS1E200GN RS1E200GN
Product Name Nch 30V 57A Power MOSFET 4.5V Drive Nch MOSFET
Polarity N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
IDSS 57000 milliamps 57000 milliamps
QG 7.8 nC
PD 25000 milliwatts 25000 milliwatts
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