MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
4V Drive Nch MOSFET Product overview: RQ1E075XN from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ1E075XN can be used for catalog matching and distributor lookup.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RQ1E075XN | RQ1E075XN | 278-RQ1E075XN |
| Product Name | 4V Drive Nch MOSFET | 4V Drive Nch MOSFET | 4V MOSFET Transistor |
| Polarity | N-Channel | N-Channel | |
| V(BR)DSS | 30 volts | 30 volts | |
| IDSS | 7500 milliamps | 7500 milliamps | |
| PD | 1500 milliwatts | 1500 milliwatts |
