MOSFET N-CH 40V 18A/80A 8HSOP Product overview: RS1G180MNTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 18A, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 18A, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RS1G180MNTB can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092699-RS1G180MNTB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-HSOP
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 18A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 19.5nC @ 10V
Max Input Capacitance: 1293pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500
N-Channel 40V 18A (Ta), 80A (Tc) 3W (Ta), 30W (Tc) Surface Mount 8-HSOP
N-Channel 40V 18A (Ta), 80A (Tc) 3W (Ta), 30W (Tc) Surface Mount 8-HSOP
N-Channel 40V 18A (Ta), 80A (Tc) 3W (Ta), 30W (Tc) Surface Mount 8-HSOP
MOSFET N-CH 40V 18A/80A 8HSOP
MOSFET Trans MOSFET N-CH 40V 18A
MOSFET, N-CH, 40V, 80A, HSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 40V 18A/80A 8HSOP
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-RS1G180MNTB | 1092699-RS1G180MNTB | 846-RS1G180MNCT-ND | RS1G180MNTB | RS1G180MNTB | 10AC8975 | RS1G180MNTB |
| Product Name | 40V 18A 80A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RS1G180MNTB | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 40V, 80A, Hsop; Transistor Polarity Rohm | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | ||||
| Transconductance | 0.0110 kS | ||||||
| PD | 30 milliwatts | 3000 to 30000 milliwatts | 3000 milliwatts |
