N-Channel 30V 16A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
N-Channel 30V 16A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
MOSFET N-CH 30V 16A 8HSMT Product overview: RQ3E160ADTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ3E160ADTB can be used for catalog matching and distributor lookup.
Win Source Part Number: 970500-RQ3E160ADTB
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-HSMT (3.2x3)
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: RQ3E160ADTBCT,RQ3E16
Base Product Number: RQ3E160
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 30V 16A 8HSMT
MOSFET N-CH 30V 16A 8HSMT
MOSFET N-CH 30V 16A 8HSMT
MOSFET Nch 30V 16A Middle Power MOSFET
MOSFET, N-CH, 30V, HSMT; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RQ3E160ADTBTR-ND | 278-RQ3E160ADTB | 970500-RQ3E160ADTB | RQ3E160ADTB | RQ3E160ADTB | 687-RQ3E160ADTB | RQ3E160ADTB | 82AC3044 |
| Product Name | Single FETs, MOSFETs | 30V 16A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 30V 16A 8HSMT | MOSFET | Mosfet, N-Ch, 30V, Hsmt; Transistor Polarity Rohm |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | 8-PowerVDFN | Tape & Reel (TR) | SOT3 | 8-PowerVDFN | 8-PowerVDFN | TO-3 | ||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| PD | 2 milliwatts | 2000 milliwatts | 2000 milliwatts | 2000 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |