ROHM Semiconductor USA, LLC Single FETs, MOSFETs RQ3E160ADTB

Description
N-Channel 30V 16A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
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Description
N-Channel 30V 16A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - RQ3E160ADTBTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RQ3E160ADTBTR-ND
Single FETs, MOSFETs RQ3E160ADTBTR-ND
N-Channel 30V 16A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

N-Channel 30V 16A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

Buy Now Datasheet
Single FETs, MOSFETs - RQ3E160ADTBCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RQ3E160ADTBCT-ND
Single FETs, MOSFETs RQ3E160ADTBCT-ND
N-Channel 30V 16A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

N-Channel 30V 16A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

Buy Now Datasheet
Singapore, Singapore
30V 16A MOSFET Transistor
278-RQ3E160ADTB
30V 16A MOSFET Transistor 278-RQ3E160ADTB
MOSFET N-CH 30V 16A 8HSMT Product overview: RQ3E160ADTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ3E160ADTB can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 16A 8HSMT Product overview: RQ3E160ADTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ3E160ADTB can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 970500-RQ3E160ADTB - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
970500-RQ3E160ADTB
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 970500-RQ3E160ADTB
Win Source Part Number: 970500-RQ3E160ADTB Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Package / Case: 8-PowerVDFN Supplier Device Package: 8-HSMT (3.2x3) Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: RQ3E160ADTBCT,RQ3E16 0ADTBTR,RQ3E160ADTBD KR Base Product Number: RQ3E160 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 970500-RQ3E160ADTB
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-HSMT (3.2x3)
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: RQ3E160ADTBCT,RQ3E160ADTBTR,RQ3E160ADTBDKR
Base Product Number: RQ3E160
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - RQ3E160ADTB - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
RQ3E160ADTB
Single FETs, MOSFETs RQ3E160ADTB
MOSFET N-CH 30V 16A 8HSMT

MOSFET N-CH 30V 16A 8HSMT

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RQ3E160ADTB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RQ3E160ADTB
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RQ3E160ADTB
MOSFET N-CH 30V 16A 8HSMT

MOSFET N-CH 30V 16A 8HSMT

Supplier's Site
MOSFET N-CH 30V 16A 8HSMT - 687-RQ3E160ADTB - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 16A 8HSMT
687-RQ3E160ADTB
MOSFET N-CH 30V 16A 8HSMT 687-RQ3E160ADTB
MOSFET N-CH 30V 16A 8HSMT

MOSFET N-CH 30V 16A 8HSMT

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Nch 30V 16A Middle Power MOSFET

MOSFET Nch 30V 16A Middle Power MOSFET

Buy Now Datasheet
Mosfet, N-Ch, 30V, Hsmt; Transistor Polarity Rohm - 82AC3044 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, Hsmt; Transistor Polarity Rohm
82AC3044
Mosfet, N-Ch, 30V, Hsmt; Transistor Polarity Rohm 82AC3044
MOSFET, N-CH, 30V, HSMT; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 30V, HSMT; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number RQ3E160ADTBTR-ND 278-RQ3E160ADTB 970500-RQ3E160ADTB RQ3E160ADTB RQ3E160ADTB 687-RQ3E160ADTB RQ3E160ADTB 82AC3044
Product Name Single FETs, MOSFETs 30V 16A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 30V 16A 8HSMT MOSFET Mosfet, N-Ch, 30V, Hsmt; Transistor Polarity Rohm
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
Package Type 8-PowerVDFN Tape & Reel (TR) SOT3 8-PowerVDFN 8-PowerVDFN TO-3
MOSFET Operating Mode Enhancement Enhancement; ENHANCEMENT MODE
PD 2 milliwatts 2000 milliwatts 2000 milliwatts 2000 milliwatts
TJ 150 C (302 F) 150 C (302 F) 150 C (302 F) 150 C (302 F)
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