The RRQ020P03 is a P-channel MOSFET from ROHM Semiconductor GmbH, designed for applications requiring a maximum drain-source voltage of -30V and a continuous drain current of ¬±2A. It features a low on-resistance of 160mOc, which enhances efficiency in switching applications. The device is housed in a compact TSMT6 package, making it suitable for space-constrained designs. It is compliant with RoHS standards and is halogen-free, ensuring environmental safety. The MOSFET has a maximum power dissipation of 1.25W and operates within a junction temperature range of -55¬8C to +150¬8C. Its electrical characteristics include a gate threshold voltage ranging from -1.0V to -2.5V and a total gate charge of 3.2nC, making it suitable for various switching power supply applications.
Middle Power MOSFET RRQ020P03 is suitable for switching power supply.
Middle Power MOSFET RRQ020P03 is suitable for switching power supply.
MOSFET P-CH 30V 2A TSMT6 Product overview: RRQ020P03 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RRQ020P03 can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 210881-RRQ020P03
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.25W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TSMT6 (SC-95)
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 3.2nC @ 5V
Max Input Capacitance: 230pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 160 mOhm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RRQ020P03 | RRQ020P03 | 285-RRQ020P03 | 210881-RRQ020P03 |
| Product Name | Pch -30V -2A Middle Power MOSFET | Pch -30V -2A Middle Power MOSFET | 30V 2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RRQ020P03 |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel |
| V(BR)DSS | -30 volts | -30 volts | 30 volts | |
| IDSS | -2000 milliamps | -2000 milliamps | ||
| QG | 3.2 nC | 3.2 nC | ||
| PD | 1250 milliwatts | 1250 milliwatts | 1250 milliwatts | 1250 milliwatts |
