MOSFET P-CH 30V 3.5A TSMT6 Product overview: RQ6E035ATTCR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ6E035ATTCR can be used for catalog matching and distributor lookup.
P-Channel 30V 3.5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95)
P-Channel 30V 3.5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95)
P-Channel 30V 3.5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95)
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092636-RQ6E035ATTCR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.25W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TSMT6 (SC-95)
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.5A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 475pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 50 mOhm @ 3.5A, 10V
Alternative Parts (Cross-Reference): SI3457DV; SI3457DV-T2; Si3457DV-E3;
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
MOSFET P-CH 30V 3.5A TSMT6
MOSFET P-CH 30V 3.5A TSMT6
MOSFET Pch -30V -3.5A Power MOSFET
MOSFET Transistor, P Channel, -3.5 A, -30 V, 0.038 ohm, -10 V, -2.5 V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-RQ6E035ATTCR | RQ6E035ATTCRTR-ND | 1092636-RQ6E035ATTCR | RQ6E035ATTCR | RQ6E035ATTCR | RQ6E035ATTCR | 71Y9252 |
| Product Name | 30V 3.5A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ6E035ATTCR | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, P Channel, -3.5 A, -30 V, 0.038 Ohm, -10 V, -2.5 V Rohs Compliant Rohm |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0032 kS | ||||||
| PD | 1.25 milliwatts | 1250 milliwatts | 1250 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |