ROHM Semiconductor USA, LLC Single FETs, MOSFETs RS1E200BNTB

N-Channel 30V 20A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP

Manufacturer: Rohm Semiconductor
Win Source Part Number: 128389-RS1E200BNTB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-HSOP
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 20A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 59nC @ 10V
Max Input Capacitance: 3100pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.9 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Consumer Electronics, Automotive, Communications & Networking, Power Management

MOSFET N-CH 30V 20A 8HSOP Product overview: RS1E200BNTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RS1E200BNTB can be used for catalog matching and distributor lookup.