ROHM Semiconductor USA, LLC Single FETs, MOSFETs RS1E200BNTB

Description
N-Channel 30V 20A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP
Request a Quote Datasheet
Description
N-Channel 30V 20A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - RS1E200BNTBTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RS1E200BNTBTR-ND
Single FETs, MOSFETs RS1E200BNTBTR-ND
N-Channel 30V 20A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP

N-Channel 30V 20A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP

Buy Now Datasheet
Singapore, Singapore
30V 20A MOSFET Transistor
278-RS1E200BNTB
30V 20A MOSFET Transistor 278-RS1E200BNTB
MOSFET N-CH 30V 20A 8HSOP Product overview: RS1E200BNTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RS1E200BNTB can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 20A 8HSOP Product overview: RS1E200BNTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RS1E200BNTB can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RS1E200BNTB - 128389-RS1E200BNTB - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RS1E200BNTB
128389-RS1E200BNTB
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RS1E200BNTB 128389-RS1E200BNTB
Manufacturer: Rohm Semiconductor Win Source Part Number: 128389-RS1E200BNTB Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-HSOP Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 20A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 59nC @ 10V Max Input Capacitance: 3100pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.9 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Consumer Electronics, Automotive, Communications & Networking, Power Management

Manufacturer: Rohm Semiconductor
Win Source Part Number: 128389-RS1E200BNTB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-HSOP
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 20A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 59nC @ 10V
Max Input Capacitance: 3100pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.9 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Consumer Electronics, Automotive, Communications & Networking, Power Management

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 4.5V Drive Nch MOSFET

MOSFET 4.5V Drive Nch MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RS1E200BNTB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RS1E200BNTB
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RS1E200BNTB
MOSFET N-CH 30V 20A 8HSOP

MOSFET N-CH 30V 20A 8HSOP

Supplier's Site
Mosfet Transistor, N Channel, 20 A, 30 V, 0.0028 Ohm, 10 V, 2.5 V Rohs Compliant Rohm - 71Y9255 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 20 A, 30 V, 0.0028 Ohm, 10 V, 2.5 V Rohs Compliant Rohm
71Y9255
Mosfet Transistor, N Channel, 20 A, 30 V, 0.0028 Ohm, 10 V, 2.5 V Rohs Compliant Rohm 71Y9255
MOSFET Transistor, N Channel, 20 A, 30 V, 0.0028 ohm, 10 V, 2.5 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 20 A, 30 V, 0.0028 ohm, 10 V, 2.5 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number RS1E200BNTBTR-ND 278-RS1E200BNTB 128389-RS1E200BNTB RS1E200BNTB RS1E200BNTB 71Y9255
Product Name Single FETs, MOSFETs 30V 20A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - RS1E200BNTB MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 20 A, 30 V, 0.0028 Ohm, 10 V, 2.5 V Rohs Compliant Rohm
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel
Package Type 8-PowerTDFN Tape & Reel (TR) SOT3; 8-HSOP 8-HSOP TO-3
MOSFET Operating Mode Enhancement
Transconductance 0.0150 kS
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