RS1E350BN is an N-channel 30V power MOSFET designed for switching applications, housed in an HSOP8 package. It has a maximum continuous drain current of 35A at 25°C, a pulsed drain current of ±140A, and a maximum on-resistance of 1.7mΩ at VGS=10V and ID=35A. The device supports a junction temperature range of -55°C to +150°C, has a thermal resistance junction-to-case of 3.57°C/W, and is RoHS compliant and halogen-free. It is 100% Rg and UIS tested.
RS1E350BN is MOSFET for switching application that features Low on-resistance.
RS1E350BN is MOSFET for switching application that features Low on-resistance.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RS1E350BN | RS1E350BN |
| Product Name | Nch 30V 80A Power MOSFET | Nch 30V 35A Middle Power MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 80000 milliamps | 35000 milliamps |
| QG | 95 nC | 95 nC |
| PD | 35000 milliwatts | 3000 milliwatts |
