The RS1E350GN is an N-channel 30V power MOSFET designed for switching applications, housed in an HSOP8 package. It has a maximum continuous drain current of 35A at 25°C ambient, with a pulsed drain current of ±140A, and a maximum power dissipation of 39W. The device features a typical on-resistance of 1.48mΩ at 10V gate-source voltage and 1.76mΩ maximum at 35A. It complies with RoHS and is halogen-free. Thermal resistance from junction to case is 3.2°C/W, and junction-to-ambient is 41.7°C/W when mounted on a 40×40×0.8mm copper board. The operating junction and storage temperature range is -55°C to +150°C. The device is 100% Rg and UIS tested.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RS1E350GN | RS1E350GN |
| Product Name | Nch 30V 80A Power MOSFET | 4.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 80000 milliamps | 35000 milliamps |
| QG | 32.7 nC | |
| PD | 39000 milliwatts | 38000 milliwatts |
