The RQ3E150GN is an N-channel 30V MOSFET in an HSMT8 package designed for switching applications. It has a maximum continuous drain current of 15A at 25°C case temperature and a maximum pulsed drain current of 60A. The static drain-source on-resistance is 6.1mΩ maximum at 10V gate-source voltage and 15A drain current. The device dissipates up to 17W and operates with a junction temperature range of -55°C to 150°C. It is RoHS compliant, halogen free, and features 100% Rg and UIS testing. Thermal resistance from junction to case is 7.3°C/W, and junction-to-ambient is 62.5°C/W when mounted on a 40×40×0.8mm copper board.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RQ3E150GN | RQ3E150GN |
| Product Name | 4.5V Drive Nch MOSFET | 4.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 39000 milliamps | 39000 milliamps |
| PD | 17000 milliwatts | 17000 milliwatts |
