ROHM Semiconductor USA, LLC 30V 22A 76A MOSFET Transistor RS1E220ATTB1

MOSFET P-CH 30V 22A/76A 8HSOP Product overview: RS1E220ATTB1 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 22A, 76A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 22A, 76A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RS1E220ATTB1 can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 22A/76A 8HSOP

P-Channel 30V 22A (Ta), 76A (Tc) 3W (Ta) Surface Mount 8-HSOP

P-Channel 30V 22A (Ta), 76A (Tc) 3W (Ta) Surface Mount 8-HSOP

P-Channel 30V 22A (Ta), 76A (Tc) 3W (Ta) Surface Mount 8-HSOP

Win Source Part Number: 1089003-RS1E220ATTB1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Power Dissipation (Max): 3W (Ta)
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: RS1E220ATTB1TR,RS1E220ATTB1DKR,RS1E220ATTB1CT
Base Product Number: RS1E
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V