The RQ5H020SP is a P-channel power MOSFET from ROHM Semiconductor GmbH, designed for applications such as DC/DC converters. It has a maximum drain-source voltage (V_DSS) of -45V and a continuous drain current (I_D) rating of -2.0A. The device features a low on-resistance (R_DS(on)) of 190mOc, which contributes to efficient power management. The MOSFET includes a built-in gate-source protection diode and is housed in a compact TSMT3 surface mount package, making it suitable for space-constrained designs. It is compliant with RoHS standards and features Pb-free lead plating. The device can dissipate up to 1.0W of power under specified conditions, with a maximum junction temperature of 150¬8C. Engineers considering this component should note its thermal resistance characteristics and ensure that it meets the requirements of their specific applications.
Small surface mount package RQ5H020SP is suitable for DC/DC converters.
Small surface mount package RQ5H020SP is suitable for DC/DC converters.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RQ5H020SP | RQ5H020SP |
| Product Name | Pch -45V -2.0A Power MOSFET | Pch -45V -2.0A Power MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -45 volts | -45 volts |
| IDSS | -2000 milliamps | -2000 milliamps |
| QG | 4.5 nC | 4.5 nC |
| PD | 1000 milliwatts | 1000 milliwatts |
