ROHM Semiconductor GmbH Nch 30V 4.5A Power MOSFET RQ6E045BN

RQ6E045BN is an N-channel 30V power MOSFET designed for switching applications, housed in a TSMT6 surface-mount package. It has a continuous drain current of ±4.5A, a maximum on-resistance of 30mΩ at 10V gate drive, and a power dissipation of 1.25W. The device includes a built-in gate-source protection diode and is RoHS compliant. The junction temperature range is -55°C to +150°C, with a thermal resistance of 100°C/W. It meets AEC-Q200 standards for automotive reliability and is rated for avalanche energy of 1.5mJ per pulse.