RQ6E045BN is an N-channel 30V power MOSFET designed for switching applications, housed in a TSMT6 surface-mount package. It has a continuous drain current of ±4.5A, a maximum on-resistance of 30mΩ at 10V gate drive, and a power dissipation of 1.25W. The device includes a built-in gate-source protection diode and is RoHS compliant. The junction temperature range is -55°C to +150°C, with a thermal resistance of 100°C/W. It meets AEC-Q200 standards for automotive reliability and is rated for avalanche energy of 1.5mJ per pulse.
Power MOSFET RQ6E045BN is suitable for switching power supply.
Power MOSFET RQ6E045BN is suitable for switching power supply.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RQ6E045BN | RQ6E045BN |
| Product Name | Nch 30V 4.5A Power MOSFET | Nch 30V 4.5A Power MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 4500 milliamps | 4500 milliamps |
| QG | 8.4 nC | 8.4 nC |
| PD | 1250 milliwatts | 1250 milliwatts |
