ROHM Semiconductor USA, LLC Single FETs, MOSFETs RQ3E130MNTB1

Description
N-Channel 30V 13A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Request a Quote Datasheet
Description
N-Channel 30V 13A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 846-RQ3E130MNTB1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
846-RQ3E130MNTB1TR-ND
Single FETs, MOSFETs 846-RQ3E130MNTB1TR-ND
N-Channel 30V 13A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

N-Channel 30V 13A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ3E130MNTB1 - 793364-RQ3E130MNTB1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ3E130MNTB1
793364-RQ3E130MNTB1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ3E130MNTB1 793364-RQ3E130MNTB1
Manufacturer: Rohm Semiconductor Win Source Part Number: 793364-RQ3E130MNTB1 Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: 8-PowerVDFN Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: 8-HSMT (3.2x3) Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 840pF @ 15V Vgs (Maximum): ±20V Power Dissipation (Maximum): 2W (Ta) Rds On (Maximum) @ Id, Vgs: 8.1 mOhm @ 13A, 10V Alternative Parts (Cross-Reference): NTTFS4C10NTAG; RQ3E130MNTB; RQ3E130MNTB1; DMG7430LFG-13; Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: Rohm Semiconductor
Win Source Part Number: 793364-RQ3E130MNTB1
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: 8-PowerVDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: 8-HSMT (3.2x3)
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 840pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2W (Ta)
Rds On (Maximum) @ Id, Vgs: 8.1 mOhm @ 13A, 10V
Alternative Parts (Cross-Reference): NTTFS4C10NTAG; RQ3E130MNTB; RQ3E130MNTB1; DMG7430LFG-13;
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
30V 13A MOSFET Transistor
278-RQ3E130MNTB1
30V 13A MOSFET Transistor 278-RQ3E130MNTB1
MOSFET N-CH 30V 13A HSMT8 Product overview: RQ3E130MNTB1 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ3E130MNTB1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 13A HSMT8 Product overview: RQ3E130MNTB1 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ3E130MNTB1 can be used for catalog matching and distributor lookup.

Supplier's Site
MOSFET N-CH 30V 13A HSMT8 - 687-RQ3E130MNTB1 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 13A HSMT8
687-RQ3E130MNTB1
MOSFET N-CH 30V 13A HSMT8 687-RQ3E130MNTB1
MOSFET N-CH 30V 13A HSMT8

MOSFET N-CH 30V 13A HSMT8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET

MOSFET

Buy Now Datasheet
Single FETs, MOSFETs - RQ3E130MNTB1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
RQ3E130MNTB1
Single FETs, MOSFETs RQ3E130MNTB1
MOSFET N-CH 30V 13A HSMT8

MOSFET N-CH 30V 13A HSMT8

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RQ3E130MNTB1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RQ3E130MNTB1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RQ3E130MNTB1
MOSFET N-CH 30V 13A HSMT8

MOSFET N-CH 30V 13A HSMT8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 846-RQ3E130MNTB1TR-ND 793364-RQ3E130MNTB1 278-RQ3E130MNTB1 687-RQ3E130MNTB1 RQ3E130MNTB1 RQ3E130MNTB1 RQ3E130MNTB1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ3E130MNTB1 30V 13A MOSFET Transistor MOSFET N-CH 30V 13A HSMT8 MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type 8-PowerVDFN SOT3 Tape & Reel (TR) 8-PowerVDFN Surface Mount
PD 2000 milliwatts 2 milliwatts 2000 milliwatts 2000 milliwatts
TJ 150 C (302 F) 150 C (302 F) 150 C (302 F) 150 C (302 F)
Packing Method Tape Reel; Reel package Tape & Reel (TR) Tape Reel; Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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