MOSFET N-CH 30V 13A HSMT8 Product overview: RQ3E130MNTB1 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ3E130MNTB1 can be used for catalog matching and distributor lookup.
N-Channel 30V 13A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Manufacturer: Rohm Semiconductor
Win Source Part Number: 793364-RQ3E130MNTB1
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: 8-PowerVDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: 8-HSMT (3.2x3)
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 840pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2W (Ta)
Rds On (Maximum) @ Id, Vgs: 8.1 mOhm @ 13A, 10V
Alternative Parts (Cross-Reference): NTTFS4C10NTAG; RQ3E130MNTB; RQ3E130MNTB1; DMG7430LFG-13;
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
MOSFET N-CH 30V 13A HSMT8
MOSFET N-CH 30V 13A HSMT8
MOSFET N-CH 30V 13A HSMT8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-RQ3E130MNTB1 | 846-RQ3E130MNTB1TR-ND | 793364-RQ3E130MNTB1 | RQ3E130MNTB1 | 687-RQ3E130MNTB1 | RQ3E130MNTB1 | RQ3E130MNTB1 |
| Product Name | 30V 13A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ3E130MNTB1 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 30V 13A HSMT8 | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| PD | 2 milliwatts | 2000 milliwatts | 2000 milliwatts | 2000 milliwatts | |||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | |||
| Package Type | Tape & Reel (TR) | 8-PowerVDFN | SOT3 | Surface Mount | 8-PowerVDFN |