N-Channel 40V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
N-Channel 40V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
N-Channel 40V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092624-RQ3G100GNTB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-HSMT (3.2x3)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 8.4nC @ 10V
Max Input Capacitance: 615pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14.3 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
MOSFET N-CH 40V 10A 8HSMT Product overview: RQ3G100GNTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ3G100GNTB can be used for catalog matching and distributor lookup.
MOSFET N-CH 40V 10A 8HSMT
MOSFET N-CH 40V 10A 8HSMT
MOSFET Transistor, N Channel, 10 A, 40 V, 0.011 ohm, 10 V, 2.5 V RoHS Compliant: Yes
40V 10A 14.3mΩ@10A,10V 2W 2.5V@1mA null HSMT-8(3x3.2) MOSFETs ROHS
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RQ3G100GNTBTR-ND | 1092624-RQ3G100GNTB | 278-RQ3G100GNTB | RQ3G100GNTB | RQ3G100GNTB | 71Y9247 | RQ3G100GNTB |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ3G100GNTB | 40V 10A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 10 A, 40 V, 0.011 Ohm, 10 V, 2.5 V Rohs Compliant Rohm | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | 8-PowerVDFN | SOT3; 8-HSMT (3.2x3) | Tape & Reel (TR) | Surface Mount | 8-PowerVDFN | TO-3 | |
| V(BR)DSS | 40 volts | 40 volts | 40 volts | ||||
| PD | 2000 milliwatts | 2 milliwatts | 2000 milliwatts | 2000 milliwatts | |||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
