The RQ6E050AT is a P-channel power MOSFET designed for switching applications, housed in a TSMT6 surface-mount package. It has a drain-source voltage rating of -30 V and a continuous drain current of ±5.0 A, with a maximum on-state resistance of 27 mΩ at -10 V gate-source voltage. The device dissipates up to 1.25 W and operates with a maximum junction temperature of 150 °C. It is RoHS compliant and features avalanche energy capability of 18.2 mJ. The thermal resistance from junction to ambient is 100 °C/W when mounted on a 30×30×0.8 mm ceramic board.
The small surface mount package RQ6E050AT is suitable for switching.
The small surface mount package RQ6E050AT is suitable for switching.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RQ6E050AT | RQ6E050AT |
| Product Name | Pch -30V -5A Power MOSFET | Pch -30V -5A Power MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -30 volts | -30 volts |
| IDSS | -5000 milliamps | -5000 milliamps |
| QG | 10.4 nC | 10.4 nC |
| PD | 1250 milliwatts | 1250 milliwatts |
