RS1E180BN is an N-channel 30V MOSFET designed for switching applications, housed in an HSOP8 package. It has a maximum continuous drain current of 18A at 25°C and a pulsed drain current of 72A, with a maximum on-resistance of 4.9mΩ at 10V gate-source voltage. Power dissipation is rated at 25W, with a junction temperature range of -55°C to +150°C. The device is RoHS compliant and halogen-free. Thermal resistance from junction to case is up to 5.0°C/W, and junction-to-ambient is up to 41.7°C/W when mounted on a 40×40×0.8mm copper board.
RS1E180BN is low on-resistance and high power small mold package MOSFET for switching application.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
RS1E180BN is low on-resistance and high power small mold package MOSFET for switching application.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ROHM Semiconductor USA, LLC | |
|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET |
| Product Number | RS1E180BN | RS1E180BN | RS1E180BN |
| Product Name | Nch 30V 60A Middle Power MOSFET | 4.5V Drive Nch MOSFET | Nch 30V 60A Middle Power MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts | 30 volts |
| IDSS | 60000 milliamps | 18000 milliamps | 60000 milliamps |
| QG | 23 nC | 23 nC | |
| PD | 25000 milliwatts | 3000 milliwatts | 25000 milliwatts |
