RS1E170GN is an N-channel 30V power MOSFET in an HSOP8 package, designed for switching applications. It has a continuous drain current of ±17A at 25°C ambient temperature and a pulsed drain current of ±68A. The maximum on-resistance is 6.7mΩ at 10V gate-source voltage and 17A drain current. It dissipates up to 23W of power and has a thermal resistance from junction to case of 5.4°C/W when mounted on a copper board. The device is RoHS compliant, halogen-free, and undergoes 100% Rg and UIS testing. The operating junction and storage temperature range is -55°C to +150°C.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RS1E170GN | RS1E170GN |
| Product Name | Nch 30V 40A Power MOSFET | 4.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 40000 milliamps | 40000 milliamps |
| QG | 5.9 nC | |
| PD | 23000 milliwatts | 3000 milliwatts |
