The RRF015P03 is a P-channel MOSFET designed for DC/DC converter applications, housed in a TUMT3 surface-mount package. It has a drain-source voltage rating of -30 V and a continuous drain current of ±1.5 A, with a maximum on-resistance of 160 mΩ at -10 V gate-source voltage. The device includes a built-in gate-source protection diode, is RoHS compliant, and operates over a junction temperature range of -55°C to +150°C. Power dissipation is rated at 0.8 W under standard conditions.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RRF015P03 | RRF015P03 |
| Product Name | 4V Drive Pch MOSFET | 4V Drive Pch MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -30 volts | -30 volts |
| IDSS | -1500 milliamps | -1500 milliamps |
| PD | 800 milliwatts | 800 milliwatts |
