MOSFET N-CH 200V 3A CPT3 Product overview: RND030N20TL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RND030N20TL can be used for catalog matching and distributor lookup.
N-Channel 200V 3A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3
Win Source Part Number: 1383336-RND030N20TL
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel (TR)
Standard Package: 2,500 pcs
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 870mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 5.2V @ 1mA
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Base Product Number: RND030
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
MOSFET N-CH 200V 3A CPT3
MOSFET 10V Drive Nch Power MOSFET
MOSFET, N-CH, 200V, 3A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.62ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.2V; Power Dissipation RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-RND030N20TL | 846-RND030N20TLTR-ND | 1383336-RND030N20TL | RND030N20TL | RND030N20TL | 10AC8660 |
| Product Name | 200V 3A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 200V, 3A, To-252; Transistor Polarity Rohm |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| Transconductance | 7.50E-4 kS | |||||
| PD | 20 milliwatts | 850 to 20000 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) |