ROHM Semiconductor USA, LLC Single FETs, MOSFETs RS1E321GNTB1

N-Channel 30V 32A (Ta), 80A (Tc) 3W (Ta) Surface Mount 8-HSOP

N-Channel 30V 32A (Ta), 80A (Tc) 3W (Ta) Surface Mount 8-HSOP

MOSFET N-CH 30V 32A/80A 8HSOP Product overview: RS1E321GNTB1 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 32A, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 32A, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RS1E321GNTB1 can be used for catalog matching and distributor lookup.

Manufacturer: Rohm Semiconductor
Win Source Part Number: 803338-RS1E321GNTB1
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: 150°C
Manufacturer Package: 8-PowerTDFN
Power Dissipation (Maximum): 3W
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 2.1mOhm at 32A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 42.8nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2850pF at 15V
Current - Continuous Drain (Id) at 25°C: 32A , 80A (Tc)
Vgs(th) (Maximum) at Id: 2.5V at 1mA
Maximum Vgs: ±20V