ROHM Semiconductor USA, LLC Single FETs, MOSFETs RS1E321GNTB1

Description
N-Channel 30V 32A (Ta), 80A (Tc) 3W (Ta) Surface Mount 8-HSOP
Request a Quote Datasheet
Description
N-Channel 30V 32A (Ta), 80A (Tc) 3W (Ta) Surface Mount 8-HSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - RS1E321GNTB1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RS1E321GNTB1TR-ND
Single FETs, MOSFETs RS1E321GNTB1TR-ND
N-Channel 30V 32A (Ta), 80A (Tc) 3W (Ta) Surface Mount 8-HSOP

N-Channel 30V 32A (Ta), 80A (Tc) 3W (Ta) Surface Mount 8-HSOP

Buy Now Datasheet
Single FETs, MOSFETs - RS1E321GNTB1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RS1E321GNTB1CT-ND
Single FETs, MOSFETs RS1E321GNTB1CT-ND
N-Channel 30V 32A (Ta), 80A (Tc) 3W (Ta) Surface Mount 8-HSOP

N-Channel 30V 32A (Ta), 80A (Tc) 3W (Ta) Surface Mount 8-HSOP

Buy Now Datasheet
Singapore
30V 32A 80A MOSFET Transistor
278-RS1E321GNTB1
30V 32A 80A MOSFET Transistor 278-RS1E321GNTB1
MOSFET N-CH 30V 32A/80A 8HSOP Product overview: RS1E321GNTB1 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 32A, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 32A, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RS1E321GNTB1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 32A/80A 8HSOP Product overview: RS1E321GNTB1 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 32A, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 32A, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RS1E321GNTB1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FETs - Single - RS1E321GNTB1 - 803338-RS1E321GNTB1 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - RS1E321GNTB1
803338-RS1E321GNTB1
FETs - Single - RS1E321GNTB1 803338-RS1E321GNTB1
Manufacturer: Rohm Semiconductor Win Source Part Number: 803338-RS1E321GNTB1 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30V Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: 150°C Manufacturer Package: 8-PowerTDFN Power Dissipation (Maximum): 3W Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 2.1mOhm at 32A, 10V Gate Charge (Qg) (Maximum) at Vgs: 42.8nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 2850pF at 15V Current - Continuous Drain (Id) at 25°C: 32A , 80A (Tc) Vgs(th) (Maximum) at Id: 2.5V at 1mA Maximum Vgs: ±20V

Manufacturer: Rohm Semiconductor
Win Source Part Number: 803338-RS1E321GNTB1
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: 150°C
Manufacturer Package: 8-PowerTDFN
Power Dissipation (Maximum): 3W
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 2.1mOhm at 32A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 42.8nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2850pF at 15V
Current - Continuous Drain (Id) at 25°C: 32A , 80A (Tc)
Vgs(th) (Maximum) at Id: 2.5V at 1mA
Maximum Vgs: ±20V

Buy Now
Sheung Wan, Hong Kong
MOSFET NCH 30V 80A POWER

MOSFET NCH 30V 80A POWER

Buy Now Datasheet
Mosfet, N-Ch, 30V, 80A, 150Deg C, 34W Rohs Compliant Rohm - 29AK5181 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 80A, 150Deg C, 34W Rohs Compliant Rohm
29AK5181
Mosfet, N-Ch, 30V, 80A, 150Deg C, 34W Rohs Compliant Rohm 29AK5181
MOSFET, N-CH, 30V, 80A, 150DEG C, 34W ROHS COMPLIANT: YES

MOSFET, N-CH, 30V, 80A, 150DEG C, 34W ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RS1E321GNTB1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RS1E321GNTB1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RS1E321GNTB1
MOSFET N-CH 30V 32A/80A 8HSOP

MOSFET N-CH 30V 32A/80A 8HSOP

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number RS1E321GNTB1TR-ND 278-RS1E321GNTB1 803338-RS1E321GNTB1 RS1E321GNTB1 29AK5181 RS1E321GNTB1
Product Name Single FETs, MOSFETs 30V 32A 80A MOSFET Transistor FETs - Single - RS1E321GNTB1 MOSFET Mosfet, N-Ch, 30V, 80A, 150Deg C, 34W Rohs Compliant Rohm Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
Package Type 8-PowerTDFN Tape & Reel (TR) SOT3 TO-3 Surface Mount
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
Transconductance 0.0350 kS
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