RQ5C060BC is a P-channel MOSFET designed for switching applications, featuring a drain-source voltage rating of -20 V and a continuous drain current of ±6.0 A. It is packaged in a TSMT3 surface-mount case with a power dissipation rating of 1.0 W. The device has a maximum on-resistance of 21.1 mΩ at -4.5 V gate-source voltage and ±6.0 A drain current. It is RoHS compliant and halogen-free, with an operating junction and storage temperature range of -55 °C to +150 °C.
RQ5C060BC is Low on-resistance and high power small mold package MOSFET for switching.
RQ5C060BC is Low on-resistance and high power small mold package MOSFET for switching.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RQ5C060BC | RQ5C060BC |
| Product Name | Pch -20V -6A Middle Power MOSFET | Pch -20V -6A Middle Power MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -20 volts | -20 volts |
| IDSS | -6000 milliamps | -6000 milliamps |
| QG | 19.2 nC | 19.2 nC |
| PD | 1000 milliwatts | 1000 milliwatts |
