RS1E280GN is an N-channel 30V power MOSFET in an HSOP8 package designed for switching applications. It has a maximum drain-source on-state resistance of 2.6mΩ at 10V gate-source voltage and can handle a continuous drain current of 28A at 25°C. The device supports a pulsed drain current of up to 112A and features a thermal resistance from junction to case of 4.0°C/W. It is RoHS compliant, halogen-free, and meets 100% Rg and UIS testing. The operating junction and storage temperature range is from -55°C to +150°C.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RS1E280GN | RS1E280GN |
| Product Name | 4.5V Drive Nch MOSFET | 4.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 80000 milliamps | 80000 milliamps |
| PD | 31000 milliwatts | 31000 milliwatts |
