RQ3E100BN is an N-channel 30V power MOSFET in an HSMT8 package designed for switching applications. It has a continuous drain current of ±10A at 25°C and a pulsed drain current of ±40A. The maximum static drain-source on-state resistance is 10.4mΩ at 10V gate-source voltage and 15.3mΩ at 4.5V. Power dissipation is rated at 15W with a thermal resistance junction-to-ambient of 62.5°C/W when mounted on a 40×40×0.8mm copper board. The device is RoHS compliant and halogen-free. Junction and storage temperature range is -55°C to +150°C.
RQ3E100BN is high power package(HSMT8) MOSFET for switching.
RQ3E100BN is high power package(HSMT8) MOSFET for switching.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RQ3E100BN | RQ3E100BN |
| Product Name | Nch 30V 21A Power MOSFET | Nch 30V 10A Middle Power MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 21000 milliamps | 13500 milliamps |
| QG | 10.5 nC | 10.5 nC |
| PD | 15000 milliwatts | 15000 milliwatts |
