The RS1G180MN is an N-channel 40V power MOSFET designed for switching applications, housed in an HSOP8 package with a power dissipation of 30W. It has a maximum continuous drain current of 18A at 25°C and a pulsed drain current of 72A, with a maximum on-resistance of 7.0mΩ at 10V gate-source voltage. The device is RoHS compliant, halogen-free, and features 100% Rg and UIS testing. Its junction temperature range is -55°C to +150°C, and it has a thermal resistance from junction to case of 4.1°C/W and junction to ambient of 41.7°C/W when mounted on a 40×40×0.8mm copper board.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RS1G180MN | RS1G180MN |
| Product Name | Nch 40V 57A Power MOSFET | 4.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 40 volts | 40 volts |
| IDSS | 57000 milliamps | 80000 milliamps |
| QG | 9.5 nC | |
| PD | 30000 milliwatts | 3000 milliwatts |
