RQ6E060AT is a P-channel MOSFET designed for switching and load switch applications, with a drain-source voltage rating of -30V and a continuous drain current of ±6.0A. It is packaged in the TSMT6 surface-mount case, features a maximum on-resistance of 26.4mΩ at -10V gate-source voltage, and dissipates up to 1.25W of power when mounted on a ceramic board. The device is RoHS compliant, halogen-free, and meets 100% Rg and UIS testing standards. Its junction temperature range is -55°C to +150°C.
RQ6E060AT is low on-resistance MOSFET for switching and load switch.
RQ6E060AT is low on-resistance MOSFET for switching and load switch.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RQ6E060AT | RQ6E060AT |
| Product Name | Pch -30V -6A Middle Power MOSFET | Pch -30V -6A Middle Power MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -30 volts | -30 volts |
| IDSS | -6000 milliamps | -6000 milliamps |
| QG | 12.9 nC | 12.9 nC |
| PD | 1250 milliwatts | 1250 milliwatts |
