RS1E130GN is an N-channel 30V power MOSFET designed for switching applications, housed in an HSOP8 package. It has a maximum continuous drain current of 13A at 25°C and a drain-source on-resistance of up to 11.7mΩ at 10V gate-source voltage. The device supports a pulse drain current of ±52A and dissipates up to 22W of power. Thermal resistance from junction to case is 5.6°C/W, and junction-to-ambient is 41.7°C/W when mounted on a 40×40×0.8mm copper board. It operates over a junction temperature range of -55°C to +150°C, is RoHS compliant, halogen-free, and features 100% Rg and UIS testing.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RS1E130GN | RS1E130GN |
| Product Name | 4.5V Drive Nch MOSFET | 4.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 35000 milliamps | 35000 milliamps |
| PD | 22000 milliwatts | 22000 milliwatts |
