RQ5E025AT is a P-channel MOSFET designed for switching applications, housed in a TSMT3 surface-mount package. It has a drain-source voltage rating of -30 V and a continuous drain current of ±2.5 A, with a maximum on-resistance of 91 mΩ at -10 V gate-source voltage and 135 mΩ at -4.5 V. The device dissipates up to 1 W and operates with a junction temperature range of -55 °C to +150 °C. It is RoHS compliant and features a pulsed drain current capability of ±12 A. The thermal resistance from junction to ambient is 125 °C/W when mounted on a ceramic board.
RQ5E025AT is MOSFET for switching application that features Low on-resistance.
RQ5E025AT is MOSFET for switching application that features Low on-resistance.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RQ5E025AT | RQ5E025AT |
| Product Name | Pch -30V -2.5A Middle Power MOSFET | Pch -30V -2.5A Middle Power MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -30 volts | -30 volts |
| IDSS | -2500 milliamps | -2500 milliamps |
| QG | 2.7 nC | 2.7 nC |
| PD | 1000 milliwatts | 1000 milliwatts |
