Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092617-RQ3E100GNTB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-HSMT (3.2x3)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 7.9nC @ 10V
Max Input Capacitance: 420pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.7 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 10A 8HSMT
N-Channel 30V 10A (Ta) 2W (Ta), 15W (Tc) Surface Mount 8-HSMT (3.2x3)
N-Channel 30V 10A (Ta) 2W (Ta), 15W (Tc) Surface Mount 8-HSMT (3.2x3)
N-Channel 30V 10A (Ta) 2W (Ta), 15W (Tc) Surface Mount 8-HSMT (3.2x3)
MOSFET, N-CH, 30V, 21A, HSMT-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0089ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
MOSFET N-CH 30V 10A 8HSMT
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1092617-RQ3E100GNTB | RQ3E100GNTB | RQ3E100GNTBTR-ND | RQ3E100GNTB | 10AC8917 | RQ3E100GNTB |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ3E100GNTB | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 30V, 21A, Hsmt-8; Transistor Polarity Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | ||||
| PD | 2000 to 15000 milliwatts | 2000 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | ||||
| Package Type | SOT3; 8-HSMT (3.2x3) | 8-PowerVDFN | 8-PowerVDFN | TO-3 | 8-PowerVDFN |
