MOSFET N-CHANNEL 30V 60A 8-HSOP Product overview: RS1E180BNTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RS1E180BNTB can be used for catalog matching and distributor lookup.
MOSFET N-CHANNEL 30V 60A 8-HSOP
MOSFET N-CHANNEL 30V 60A 8-HSOP
MOSFET N-CHANNEL 30V 60A 8-HSOP
Manufacturer: Rohm Semiconductor
Win Source Part Number: 892335-RS1E180BNTB
Series: *
Package: Reel - TR
Family Name: RS1E
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 19 Weeks
REACH Status: REACH Affected
HTSUS: 8541.21.0095
Other Part Number: RS1E180BNTBDKR, 846-RS1E180BNTR, RS1E180BNTBCT, RS1E180BNTBTR
MOSFET N-CHANNEL 30V 60A 8-HSOP
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-RS1E180BNTB | 846-RS1E180BNTR-ND | 892335-RS1E180BNTB | RS1E180BNTB |
| Product Name | N-Channel 30V 60A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RS1E180BNTB | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||
| Transconductance | 0.0120 kS | |||
| PD | 25 milliwatts |