MOSFET P-CH 30V 10A 8SOP
P-Channel 30V 10A (Ta) 650mW (Ta) Surface Mount 8-SOP
P-Channel 30V 10A (Ta) 650mW (Ta) Surface Mount 8-SOP
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092662-RRH100P03GZE
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 650mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 68nC @ 10V
Max Input Capacitance: 3600pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12.6 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
MOSFET P-CH 30V 10A 8SOP Product overview: RRH100P03GZETB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RRH100P03GZETB can be used for catalog matching and distributor lookup.
MOSFET, P-CH, -30V, -10A, SOP-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-10A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power RoHS Compliant: Yes
MOSFET P-CH 30V 10A 8SOP
MOSFET P-CH 30V 10A SOP8
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RRH100P03GZETBTR-ND | 1092662-RRH100P03GZETB | 278-RRH100P03GZETB | RRH100P03GZETB | 10AC8933 | RRH100P03GZETB | 687-RRH100P03GZETB |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RRH100P03GZETB | 30V 10A MOSFET Transistor | MOSFET | Mosfet, P-Ch, -30V, -10A, Sop-8; Transistor Polarity Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET P-CH 30V 10A SOP8 |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | ||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SOP | Tape & Reel (TR) | TO-3 | 8-SOIC (0.154, 3.90mm Width) | ||
| V(BR)DSS | 30 volts | -30 volts | |||||
| PD | 650 milliwatts | 2 milliwatts | 650 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |