The RQ3E110AJ is an N-channel 30V MOSFET designed for switching applications, housed in an HSMT8 surface-mount package. It has a maximum continuous drain current of 11A at 25°C case temperature and a pulsed drain current of ±44A. The static drain-source on-resistance is up to 11.7mΩ at 11A and 4.5V gate-source voltage. Power dissipation is rated at 15W, with thermal resistance from junction to case of 8.1°C/W and junction to ambient of 62.5°C/W when mounted on a 40×40×0.8mm copper board. The device is RoHS compliant, with a junction and storage temperature range of -55°C to +150°C.
RQ3E110AJ is low on-resistance and Small Surface Mount Package MOSFET for switching application.
RQ3E110AJ is low on-resistance and Small Surface Mount Package MOSFET for switching application.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RQ3E110AJ | RQ3E110AJ |
| Product Name | Nch 30V 24A Power MOSFET | Nch 30V 24A Power MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 24000 milliamps | 24000 milliamps |
| QG | 13.5 nC | 13.5 nC |
| PD | 15000 milliwatts | 15000 milliwatts |
