RQ3E180AJ is an N-channel 30V MOSFET designed for switching applications, featuring a maximum continuous drain current of 18A and a maximum on-resistance of 4.5mΩ at 4.5V gate drive. It is housed in a HSMT8 surface-mount package and rated for a junction temperature up to 150°C. The device is RoHS compliant and meets AEC-Q200 qualifications, with a single-pulse avalanche energy rating of 24.6mJ. Thermal resistance from junction to ambient is 62.5°C/W when mounted on a 30×30×0.8mm ceramic board.
RQ3E180AJ is MOSFET for switching application that features Low on-resistance.
RQ3E180AJ is MOSFET for switching application that features Low on-resistance.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RQ3E180AJ | RQ3E180AJ |
| Product Name | Nch 30V 18A Middle Power MOSFET | Nch 30V 18A Middle Power MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 18000 milliamps | 18000 milliamps |
| QG | 39 nC | 39 nC |
| PD | 2000 milliwatts | 2000 milliwatts |
