RQ3E100GN is an N-channel 30V MOSFET in an HSMT8 package, designed for switching applications with a continuous drain current of ±10A and power dissipation of 15W. It features a maximum on-resistance of 11.7mΩ at VGS=10V and ±21A pulsed drain current capability. The device is RoHS compliant, halogen-free, and rated for operation from -55°C to +150°C. It is tested for 100% Rg and UIS, with a thermal resistance from junction to case of 8.3°C/W. The package dimensions and tape reel specifications are provided for surface-mount assembly.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RQ3E100GN | RQ3E100GN |
| Product Name | 4.5V Drive Nch MOSFET | 4.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 21000 milliamps | 21000 milliamps |
| PD | 15000 milliwatts | 15000 milliwatts |
