RQ3E080BN is an N-channel 30V power MOSFET designed for switching applications, housed in an HSMT8 package with a continuous drain current of 8A at 25°C and a pulsed drain current of 32A. It has a maximum on-resistance of 15.2mΩ at 10V gate-source voltage and dissipates up to 14W of power. The device is RoHS compliant and halogen-free, with a junction temperature range of -55°C to +150°C and a thermal resistance from junction to case of 8.9°C/W. It meets AEC-Q200 and UL 94 V-0 standards for automotive and safety applications.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RQ3E080BN | RQ3E080BN |
| Product Name | Nch 30V 15A Power MOSFET | Nch 30V 8A Middle Power MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 15000 milliamps | 8000 milliamps |
| QG | 7.2 nC | 7.2 nC |
| PD | 14000 milliwatts | 2000 milliwatts |
