Middle Power MOSFET RS1E200BN is suitable for switching power supply.
Middle Power MOSFET RS1E200BN is suitable for switching power supply.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1243813-RS1E200BN
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Nch 30V 20A Middle Power MOSFET Product overview: RS1E200BN from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RS1E200BN can be used for catalog matching and distributor lookup.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RS1E200BN | RS1E200BN | 1243813-RS1E200BN | 285-RS1E200BN |
| Product Name | Nch 30V 68A Power MOSFET | Nch 30V 20A Middle Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RS1E200BN | 30V 20A MOSFET Transistor |
| Polarity | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||
| IDSS | 68000 milliamps | 80000 milliamps | ||
| QG | 29 nC | 29 nC | ||
| PD | 25000 milliwatts | 25000 milliwatts |
