ROHM Semiconductor USA, LLC 30V 10A MOSFET Transistor RQ3E100MNTB1

MOSFET N-CH 30V 10A HSMT8 Product overview: RQ3E100MNTB1 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ3E100MNTB1 can be used for catalog matching and distributor lookup.

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092618-RQ3E100MNTB1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-HSMT (3.2x3)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 9.9nC @ 10V
Max Input Capacitance: 520pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12.3 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): SI7112DN-T1-E3; RQ3E100MNTB; STL12N3LLH5;
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance