The RQ5E035AT is a P-channel MOSFET designed for switching applications, housed in a TSMT3 surface-mount package. It has a drain-source voltage rating of -30 V, a continuous drain current of ±3.5 A, and a maximum power dissipation of 1.0 W. The static drain-source on-state resistance is rated at a maximum of 50 mΩ at -10 V gate-source voltage. The device is RoHS compliant and operates within a junction temperature range of -55°C to +150°C. It meets the AEC-Q200 automotive reliability standard.
The small surface mount package RQ5E035AT is suitable for switching.
The small surface mount package RQ5E035AT is suitable for switching.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET |
| Product Number | RQ5E035AT | RQ5E035AT |
| Product Name | Pch -30V -3.5A Small Signal MOSFET | Pch -30V -3.5A Power MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -30 volts | -30 volts |
| IDSS | -3500 milliamps | -3500 milliamps |
| PD | 1000 milliwatts | 1000 milliwatts |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
