MOSFET P-CH 30V 12A 8HSMT Product overview: RQ3E120ATTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ3E120ATTB can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 12A 8HSMT
Manufacturer: Rohm Semiconductor
Win Source Part Number: 793363-RQ3E120ATTB
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: 8-PowerVDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: 8-HSMT (3.2x3)
Channel Type Type: P
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 62nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3200pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2W (Ta)
Rds On (Maximum) @ Id, Vgs: 8 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): AON7401; TSM150P03PQ33 RGG; RQ3E120ATTB; RQ3E100ATTB;
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
P-Channel 30V 12A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
P-Channel 30V 12A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
P-Channel 30V 12A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
MOSFET PCH -30V -12A MIDDLE POWER
MOSFET, P-CH, -30V, -39A, HSMT; Transistor Polarity:P Channel; Continuous Drain Current Id:-39A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0061ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power RoHS Compliant: Yes
MOSFET P-CH 30V 12A 8HSMT
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-RQ3E120ATTB | RQ3E120ATTB | 793363-RQ3E120ATTB | RQ3E120ATTBDKR-ND | RQ3E120ATTB | 10AC8918 | RQ3E120ATTB |
| Product Name | 30V 12A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RQ3E120ATTB | Single FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -30V, -39A, Hsmt; Transistor Polarity Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0150 kS | ||||||
| PD | 2 milliwatts | 2000 milliwatts | 2000 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |