ROHM Semiconductor USA, LLC Single FETs, MOSFETs RQ3E120ATTB

P-Channel 30V 12A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

P-Channel 30V 12A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

P-Channel 30V 12A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

MOSFET P-CH 30V 12A 8HSMT

MOSFET P-CH 30V 12A 8HSMT Product overview: RQ3E120ATTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ3E120ATTB can be used for catalog matching and distributor lookup.

Manufacturer: Rohm Semiconductor
Win Source Part Number: 793363-RQ3E120ATTB
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: 8-PowerVDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: 8-HSMT (3.2x3)
Channel Type Type: P
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 62nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3200pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2W (Ta)
Rds On (Maximum) @ Id, Vgs: 8 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): AON7401; TSM150P03PQ33 RGG; RQ3E120ATTB; RQ3E100ATTB;
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance