The RQ1E050RP is a P-channel MOSFET designed for switching applications, with a drain-source voltage rating of -30V and a continuous drain current of ±5A. It is packaged in a TSMT8 surface-mount package and features a maximum on-resistance of 31mΩ at -10V gate-source voltage. The device includes a built-in gate-source protection diode, is RoHS compliant, and operates over a junction temperature range of -55°C to +150°C. Power dissipation is rated at 1.5W under specified conditions, with thermal resistance of 83.3°C/W on a ceramic board and 113°C/W on FR4. It meets RoHS standards and is supplied in tape and reel packaging with a 3000-piece reel unit.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RQ1E050RP | RQ1E050RP |
| Product Name | Pch -30V -5A Small Signal MOSFET | 4V Drive Pch MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -30 volts | -30 volts |
| IDSS | -5000 milliamps | -5000 milliamps |
| PD | 1500 milliwatts | 1500 milliwatts |
