The RQ3L050GN is an N-channel MOSFET with a maximum drain-source voltage (V_DSS) of 60V and a continuous drain current rating of ¬±13A at a case temperature of 25¬8C. It features a low on-resistance of 61mOc, which enhances its efficiency in switching applications. The device is housed in a High Power Package (HSMT8), allowing for effective thermal management with a power dissipation capability of 14.8W. This MOSFET is RoHS compliant and halogen-free, making it suitable for environmentally conscious designs. It has been tested for gate charge characteristics and includes a maximum gate-source voltage (V_GSS) of ¬±20V. The operating junction temperature range is specified from -55¬8C to +150¬8C, providing versatility in various applications. Engineers may find this component suitable for applications requiring reliable switching performance and efficient thermal management.
RQ3L050GN is low on-resistance and small surface mount package MOSFET for switching application.
RQ3L050GN is low on-resistance and small surface mount package MOSFET for switching application.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RQ3L050GN | RQ3L050GN |
| Product Name | Nch 60V 13A Power MOSFET | Nch 60V 12A Middle Power MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 60 volts | 60 volts |
| IDSS | 13000 milliamps | 12000 milliamps |
| QG | 2.8 nC | 2.8 nC |
| PD | 14800 milliwatts | 14800 milliwatts |
