ROHM Semiconductor USA, LLC Single FETs, MOSFETs RS1E130GNTB

N-Channel 30V 13A (Ta) 3W (Ta), 22.2W (Tc) Surface Mount 8-HSOP

N-Channel 30V 13A (Ta) 3W (Ta), 22.2W (Tc) Surface Mount 8-HSOP

N-Channel 30V 13A (Ta) 3W (Ta), 22.2W (Tc) Surface Mount 8-HSOP

MOSFET N-CH 30V 13A 8HSOP Product overview: RS1E130GNTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RS1E130GNTB can be used for catalog matching and distributor lookup.

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092688-RS1E130GNTB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 22.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-HSOP
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 7.9nC @ 10V
Max Input Capacitance: 420pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.7 mOhm @ 13A, 10V
Alternative Parts (Cross-Reference): AON6414AL; STL58N3LLH5; RS1E150GNTB;
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient