MOSFET N-CH 100V 1A TSMT3
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1324653-RQ5P010SNTL
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW
Supplier Device Package: TSMT3
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C (TJ)
Case / Package: SC-96
ECCN: EAR99
Fake Threat In the Open Market: 75
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: RQ5P010SNTLCT,RQ5P01
Base Product Number: RQ5P010
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
RoHS Status: ROHS3 Compliant
MOSFET N-CH 100V 1A TSMT3 Product overview: RQ5P010SNTL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ5P010SNTL can be used for catalog matching and distributor lookup.
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N-Channel 100V 1A (Ta) 700mW (Ta) Surface Mount TSMT3
MOSFET, N-CH, 1A, 100V, SOT-346T; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
MOSFET N-CH 100V 1A TSMT3
RQ5P010SN IS A MOSFET WITH G-S P
MOSFET NCH 100V 1A SMALL SIGNAL
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RQ5P010SNTL | 1324653-RQ5P010SNTL | 278-RQ5P010SNTL | RQ5P010SNTLDKR-ND | 82AC3076 | RQ5P010SNTL | 687-RQ5P010SNTL | RQ5P010SNTL |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 100V 1A MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 1A, 100V, Sot-346T; Transistor Polarity Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | RQ5P010SN IS A MOSFET WITH G-S P | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 100 volts | |||||||
| IDSS | 1000 milliamps | 1000 milliamps | ||||||
| PD | 700 milliwatts | 700 milliwatts | 1 milliwatts | 700 milliwatts |
