ROHM Semiconductor USA, LLC 30V 7A MOSFET Transistor RQ1E070RPTR

MOSFET P-CH 30V 7A TSMT8 Product overview: RQ1E070RPTR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ1E070RPTR can be used for catalog matching and distributor lookup.

P-Channel 30V 7A (Ta) 550mW (Ta) Surface Mount TSMT8

P-Channel 30V 7A (Ta) 550mW (Ta) Surface Mount TSMT8

P-Channel 30V 7A (Ta) 550mW (Ta) Surface Mount TSMT8

Manufacturer: Rohm Semiconductor
Win Source Part Number: 803684-RQ1E070RPTR
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Temperature Range - Operating: 150°C
Manufacturer Package: 8-SMD, Flat Lead
Power Dissipation (Maximum): 550mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 17mOhm at 7A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 26nC at 5V
Input Capacitance (Ciss) (Maximum) at Vds: 2700pF at 10V
Current - Continuous Drain (Id) at 25°C: 7A
Vgs(th) (Maximum) at Id: 2.5V at 1mA
Maximum Vgs: ±20V