ROHM Semiconductor GmbH Nch 40V 34A Power MOSFET RS1G120MN

The RS1G120MN is an N-channel Power MOSFET from ROHM Semiconductor GmbH, designed for applications requiring high efficiency and compact size. It has a maximum drain-source voltage (V_DSS) of 40V and can handle continuous drain currents of ±34A at a case temperature of 25°C. The device features a low on-resistance of 16.2mΩ, which contributes to reduced power losses during operation. The MOSFET is housed in a small HSOP8 package, making it suitable for space-constrained designs. It is compliant with RoHS standards, featuring Pb-free lead plating and is halogen-free. The product is also 100% tested for gate charge and avalanche characteristics, ensuring reliability in various applications. With a power dissipation capability of 25W and a junction temperature rating of up to 150°C, the RS1G120MN is suitable for high-performance applications. Its thermal resistance values indicate effective heat management, with R_thJC at 5.0°C/W and R_thJA at 41.7°C/W. This MOSFET is packaged in embossed tape for automated assembly processes, with a basic ordering unit of 2500 pieces.