ROHM Semiconductor USA, LLC Single FETs, MOSFETs RQ3E130BNTB

N-Channel 30V 13A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

N-Channel 30V 13A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

N-Channel 30V 13A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

MOSFET N-CH 30V 13A 8HSMT Product overview: RQ3E130BNTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RQ3E130BNTB can be used for catalog matching and distributor lookup.

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092620-RQ3E130BNTB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-HSMT (3.2x3)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1900pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 13A, 10V
Alternative Parts (Cross-Reference): AON7524; RQ3E150GNTB; STL23NS3LLH7;
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Application Field: Used in Sensing & Instrumentation, Computers & Computer Peripherals, Portable Devices, Metering, Test & Measurement, Medical