The RQ1A070AP is a P-channel MOSFET designed for low-voltage switching applications, featuring a -12V drain-source voltage rating and a continuous drain current of ±7A. It is packaged in a TSMT8 surface-mount case measuring 3.10mm × 2.50mm × 0.85mm, with a maximum power dissipation of 1.5W when mounted on a ceramic board. The device has a maximum on-resistance of 14mΩ at -4.5V gate-source voltage and includes a built-in gate-source protection diode. It is RoHS compliant and meets the safety standard UL 94 V-0 for flammability. The junction temperature range is -55°C to +150°C, and the part is supplied in 3,000-piece tape reels.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RQ1A070AP | RQ1A070AP |
| Product Name | 1.5V Drive Pch MOSFET | 1.5V Drive Pch MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -12 volts | -12 volts |
| IDSS | -7000 milliamps | -7000 milliamps |
| PD | 1500 milliwatts | 1500 milliwatts |
